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IGA03N120H2
HighSpeed 2-Technology
C
* *
Designed for: - TV - Horizontal Line Deflection 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Gate-Control
G E
P-TO220-3-31 (FullPAK)
P-TO220-3-34 (FullPAK)
* Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IGA03N120H2 IGA03N120H2 VCE 1200V 1200V IC 3A 3A Eoff 0.15mJ 0.15mJ Tj,max 150C 150C Marking G03H1202 G03H1202 Package P-TO-220-3-31 P-TO-220-3-34 Ordering Code Q67040-S4648 Q67040-S4654
Maximum Ratings Parameter Collector-emitter voltage Triangular collector peak current (VGS = 15V) TC = 100C, f = 32kHz Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Gate-emitter voltage Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -40...+150 260 C VGE Ptot 20 29 V W ICpuls Symbol VCE ICpk 8.2 9 9 Value 1200 Unit V A
Power Semiconductors
1
Mar-04, Rev. 2.0
IGA03N120H2
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Thermal resistance, junction - ambient RthJA P-TO-220-3-31 P-TO-220-3-34 64 RthJC 4.3 K/W Symbol Conditions Max. Value Unit
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V, I C = 30 0A VCE(sat) V G E = 15V, I C = 3A T j = 25 C T j = 15 0 C V G E = 10V, I C = 3A , T j = 25 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 90A ,V C E =V G E V C E = 1200V, V G E = 0V T j = 25 C T j = 15 0 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Ciss Coss Crss QGate LE V C E = 25V V G E = 0V f= 1 M Hz V C C = 9 60V, I C = 3A V G E = 1 5V P -T O - 2 20- 3- 31 7 nH 205 24 7 8.6 nC pF IGES gfs V C E = 0V ,V G E = 2 0V V C E = 20V, I C = 3A 2 20 80 100 nA S 2.1 2.2 2.5 2.4 3 2.8 3.9 A 1200 V Symbol Conditions Value min. Typ. max. Unit
Power Semiconductors
2
Mar-04, Rev. 2.0
IGA03N120H2
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 25 C V C C = 8 00V, I C = 3A V G E = 0V/ 15V R G = 8 2 1) L = 180nH 1) C = 4 0 pF Energy losses include "tail" and diode 2) reverse recovery. 9.2 5.2 281 29 0.14 0.15 0.29 mJ ns Symbol Conditions Value min. Typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 15 0 C V C C = 8 00V, I C = 3A V G E = 0V/ 15V R G = 8 2 L 1 ) = 180nH C 1 ) = 4 0 pF Energy losses include "tail" and diode2) reverse recovery. 9.4 6.7 340 63 0.22 0.26 0.48 mJ ns Symbol Conditions Value min. Typ. max. Unit
Switching Energy ZVT, Inductive Load Parameter IGBT Characteristic Turn-off energy Eoff V C C = 8 00V, I C = 3A V G E = 0V/ 15V R G = 8 2 , C r 1 ) = 4nF T j = 25 C T j = 15 0 C 0.05 0.09 mJ Symbol Conditions Value min. typ. max. Unit
1) 2)
Leakage inductance L and stray capacity C due to dynamic test circuit in figure E Commutation diode from device IKP03N120H2 3 Mar-04, Rev. 2.0
Power Semiconductors
IGA03N120H2
12A
Ic
10A
10A
t p =10s 20s
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
8A T C =25C T C =100C
50s 1A 100s 1m s 0,1A 100m s DC 0,01A
6A
4A
2A
Ic
1V 10V 100V 1000V
0A 10Hz
100Hz
1kHz
10kHz
100kHz
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 82)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
30W
8A
20W
IC, COLLECTOR CURRENT
POWER DISSIPATION
6A
4A
10W
Ptot,
2A
0W 25C
50C
75C
100C
125C
150C
0A 25C
50C
75C
100C
125C
150C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
Power Semiconductors
4
Mar-04, Rev. 2.0
IGA03N120H2
10A
10A
8A
8A
IC, COLLECTOR CURRENT
6A
12V 10V 8V 6V
IC, COLLECTOR CURRENT
V GE= 1 5 V
V G E =15V 6A 12V 10V 8V 4A 6V
4A
2A
2A
0A 0V
1V
2V
3V
4V
5V
0A 0V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
12A
3V
10A
IC=6A IC=3A
IC, COLLECTOR CURRENT
8A
Tj=+150C Tj=+25C
2V
6A
IC=1.5A
4A
1V
2A
0A 3V
5V
7V
9V
0V -50C
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 20V)
Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5
Mar-04, Rev. 2.0
IGA03N120H2
1000ns
1000ns td(off)
td(off)
t, SWITCHING TIMES
tf
t, SWITCHING TIMES
100ns
100ns tf
10ns
td(on)
10ns
td(on)
tr 1ns 0A 2A 4A
tr 1ns 0 50 100 150
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, RG = 82, dynamic test circuit in Fig.E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, IC = 3A, dynamic test circuit in Fig.E)
1000ns td(off)
5V
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
4V
t, SWITCHING TIMES
100ns tf
3V
max. typ.
10ns
td(on)
2V min. 1V
tr
1ns 25C
50C
75C
100C
125C
150C
0V -50C
0C
50C
100C
150C
Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 3A, RG = 82, dynamic test circuit in Fig.E)
Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.09mA)
Power Semiconductors
6
Mar-04, Rev. 2.0
IGA03N120H2
1.0mJ
1
1
) Eon and Ets include losses due to diode recovery.
Ets
1
0.7mJ
) Eon and Ets include losses due to diode recovery.
Ets
1
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
0.6mJ
0.5mJ
Eoff
0.5mJ
0.4mJ
Eon
1
0.3mJ
Eoff Eon
1
0.2mJ
0.0mJ 0A 2A 4A
0
50
100
150
200
250
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, RG = 82, dynamic test circuit in Fig.E )
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, IC = 3A, dynamic test circuit in Fig.E )
0.5mJ
1
0.4mJ
Eoff, TURN OFF SWITCHING ENERGY LOSS
) Eon and Ets include losses due to diode recovery.
Ets
1
0.16mJ
IC=3A, TJ=150C
E, SWITCHING ENERGY LOSSES
0.12mJ
0.3mJ Eoff 0.2mJ Eon
1
0.08mJ IC=1A, TJ=150C 0.04mJ IC=1A, TJ=25C 0.00mJ 0V/us
IC=3A, TJ=25C
0.1mJ
25C
80C
125C
150C
1000V/us
2000V/us
3000V/us
Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 3A, RG = 82, dynamic test circuit in Fig.E )
dv/dt, VOLTAGE SLOPE Figure 16. Typical turn off switching energy loss for soft switching (dynamic test circuit in Fig. E)
Power Semiconductors
7
Mar-04, Rev. 2.0
IGA03N120H2
1nF
20V
VGE, GATE-EMITTER VOLTAGE
C iss
15V
UCE=240V
C, CAPACITANCE
100pF
10V
UCE=960V
5V
C oss
10pF
C rss
0V
10V
20V
30V
0V 0nC
10nC
20nC
30nC
VCE, COLLECTOR-EMITTER VOLTAGE Figure 19. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz)
10 K/W D=0.5 0.1 0.2
1
QGE, GATE CHARGE Figure 18. Typical gate charge (IC = 3A)
ZthJC, TRANSIENT THERMAL RESISTANCE
10 K/W
R,(K/W) 1,4285 1,8838 0,4057 0.05 0,4234 0,3241 0.02 0,1021 0.01 0,1340
R1
0
10 K/W
-1
, (s) 5,2404 1,7688 0,07592 0,005018 0,000595 0,000126 0,000018
R2
10 K/W
-2
single pulse
C 1 = 1 /R 1 C 2 = 2 /R 2
1s 10s 100s 1ms 10ms100ms 1s
10s
tP, PULSE WIDTH Figure 17. IGBT transient thermal impedance as a function of pulse width (D=tP/T)
Power Semiconductors
8
Mar-04, Rev. 2.0
IGA03N120H2
TO-220-3-31 (FullPAK)
dimensions symbol
[mm] min max 10.63 16.12 0.78 min 0.4084 0.6245 0.0256
[inch] max 0.4184 0.6345 0.0306
A B C D E F G H K L M N P T
10.37 15.86 0.65
2.95 typ. 3.15 6.05 13.47 3.18 0.45 1.23 3.25 6.56 13.73 3.43 0.63 1.36
0.1160 typ. 0.124 0.2384 0.5304 0.125 0.0177 0.0484 0.128 0.2584 0.5404 0.135 0.0247 0.0534
2.54 typ. 4.57 2.57 2.51 4.83 2.83 2.62
0.100 typ. 0.1800 0.1013 0.0990 0.1900 0.1113 0.1030
TO-220-3-34 (FullPAK)
dimensions symbol
[mm] min max 10.63 16.12 0.78 min 0.4084 0.6245 0.0256
[inch] max 0.4184 0.6345 0.0306
A B C D E F G H K L M N P T U
10.37 15.86 0.65
2.95 typ. 3.15 6.05 8.28 3.18 0.45 1.23 3.25 6.56 8.79 3.43 0.63 1.36
0.1160 typ. 0.124 0.2384 0.326 0.125 0.0177 0.0484 0.128 0.2584 0.346 0.135 0.0247 0.0534
2.54 typ. 4.57 2.57 2.51 4.83 2.83 2.62
0.100 typ. 0.1800 0.1013 0.0990 0.1900 0.1113 0.1030
5.00 typ.
0.197 typ.
1: Gate 2: Collector 3: Emitter
Power Semiconductors
9
Mar-04, Rev. 2.0
IGA03N120H2
Published by Infineon Technologies AG i Gr., Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
10
Mar-04, Rev. 2.0

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